In this work, a modified, lumped element graphene field effect device modelis presented. The model is based on the "Top-of-the-barrier" approach which isusually valid only for ballistic graphene nanotransistors. Proper modificationsare introduced to extend the model's validity so that it accurately describesboth ballistic and diffusive graphene devices. The model is compared to dataalready presented in the literature. It is shown that a good agreement isobtained for both nano-sized and large area graphene based channels. Accurateprediction of drain current and transconductance for both cases is obtained.
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